vishay siliconix sia411dj new product document number: 74464 s-80435-rev. c, 03-mar-08 www.vishay.com 1 p-channel 20-v (d-s) mosfet features ? halogen-free ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance applications ? load switch, pa switch and battery switch for portable devices product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 20 0.030 at v gs = - 4.5 v - 12 a 15 nc 0.041 at v gs = - 2.5 v - 12 a 0.056 at v gs = - 1.8 v - 12 a 0.150 at v gs = - 1.5 v - 2 s g d p- c hannel m os fet orderin g information: SIA411DJ-T1-GE3 (lead (p b )-free and halogen-free) marking code x x x b e x lot traceability and date code part # code powerpak sc-70-6l-single 6 5 4 1 2 3 d d d d g s s 2.05 mm 2.05 mm notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( h ttp://www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 80 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 12 a a t c = 70 c - 12 a t a = 25 c - 8.8 b, c t a = 70 c - 7 b, c pulsed drain current i dm - 20 continuous source-drain diode current t c = 25 c i s - 12 a t a = 25 c - 2.9 b, c maximum power dissipation t c = 25 c p d 19 w t c = 70 c 12 t a = 25 c 3.5 b, c t a = 70 c 2.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 s r thja 28 36 c/w maximum junction-to-case (drain) steady state r thjc 5.3 6.5 rohs compliant
www.vishay.com 2 document number: 74464 s-80435-rev. c, 03-mar-08 vishay siliconix sia411dj new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 19.5 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.3 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 20 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 5.9 a 0.025 0.030 v gs = - 2.5 v, i d = - 5.0 a 0.033 0.041 v gs = - 1.8 v, i d = - 1.8 a 0.045 0.056 v gs = - 1.5 v, i d = - 0.7 a 0.075 0.150 forward transconductance a g fs v ds = - 10 v, i d = - 5.9 a 21 s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 1200 pf output capacitance c oss 210 reverse transfer capacitance c rss 155 total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 8.8 a 25 38 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 8.8 a 15 23 gate-source charge q gs 2.5 gate-drain charge q gd 4 gate resistance r g f = 1 mhz 5 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 1.4 i d ? - 7 a, v gen = - 4.5 v, r g = 1 12 20 ns rise time t r 65 100 turn-off delay time t d(off) 40 60 fall time t f 100 150 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 1.4 i d ? - 7 a, v gen = - 8 v, r g = 1 510 rise time t r 25 35 turn-off delay time t d(off) 40 60 fall time t f 12 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 12 a pulse diode forward current i sm 20 body diode voltage v sd i s = - 7 a, v gs = 0 v - 0.85 - 1.2 v body diode reverse recovery time t rr i f = - 7 a, di/dt = 100 a/s, t j = 25 c 20 40 ns body diode reverse recovery charge q rr 10 20 nc reverse recovery fall time t a 13 ns reverse recovery rise time t b 7
document number: 74464 s-80435-rev. c, 03-mar-08 www.vishay.com 3 vishay siliconix sia411dj new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 v ds - drain-to-source voltage (v) v gs = 2 thru 5 v - drain current (a) i d 1 v 1.5 v 0.02 0.04 0.06 0.0 8 0.10 0.12 04 8 12 16 20 i d - drain c u rrent (a) - on-resistance ( ) r ds(on) v gs = 2.5 v v gs = 4.5 v v gs = 1. 8 v 0 2 4 6 8 0 5 10 15 20 25 q g - total gate charge (nc) i d = 8.8 a - gate-to-source voltage (v) v gs v ds = 10 v v ds = 16 v transfer characteristics capacitance on-resistance vs. junction temperature v gs - gate-to-source voltage (v) 0 2 4 6 8 10 0.0 0.3 0.6 0.9 1.2 1.5 t c = 25 c t c = - 55 c t c = 125 c - drain current (a) i d c rss v ds - drain-to-source voltage (v) 0 300 600 900 1200 1500 1800 2100 048121620 c oss c iss c - capacitance (pf) t j - j u nction temperat u re (c) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 i d = 5.9 a r ds(on) - on-resistance ( n ormalized) v gs = 4.5 v , 2.5 v , 1. 8 v
www.vishay.com 4 document number: 74464 s-80435-rev. c, 03-mar-08 vishay siliconix sia411dj new product typical characteristics 25 c, unless otherwise noted soure-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 0.1 1 10 100 t j = 25 c 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient v gs - gate-to-so u rce v oltage ( v ) 0.00 0.03 0.06 0.09 0.12 012345 - on-resistance ( ) r ds(on) 125 c 25 c i d = 5.9 a po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 0 5 10 15 20 25 30 safe operating area, junction-to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 t a = 25 c single p u lse - drain c u rrent (a) i d 0.1 dc 1 ms 10 ms 100 ms 1 s 10 s 100 s limited b y r ds(on)* b v dss limited
document number: 74464 s-80435-rev. c, 03-mar-08 www.vishay.com 5 vishay siliconix sia411dj new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature (c) package limited power derating 0 5 10 15 20 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w)
www.vishay.com 6 document number: 74464 s-80435-rev. c, 03-mar-08 vishay siliconix sia411dj new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74464. normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 65 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -4 1 0.1 0.2 0.1 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 single p u lse 0.05 10 -1
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix document number: 70486 www.vishay.com revision: 21-jan-08 11 application note recommended pad layout for powerpak ? sc70-6l single 1 0.300 (0.012) 0.350 (0.014) 2.200 (0.087) 1.500 (0.059) 0.650 (0.026) 0.950 (0.037) 0.300 (0.012) 0.355 (0.014) 0.235 (0.009) 0.475 (0.019) 0.870 (0.034) 0.275 (0.011) 0.350 (0.014) 0.550 (0.022) 0.650 (0.026) dimensions in mm/(inches) return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
|
